Transphorm

TP65H035WS Cascode Gallium Nitride (GaN) FET

Transphorm's TP65H035WS cascode GaN FET in TO-247 offers superior reliability and performance

Image of Transphorm's TP65H035WS Cascode GaN FETTransphorm's TP65H035WS 650 V, 35 mΩ GaN FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies, offering superior reliability and performance.

Transphorm's GaN features improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

Features
  • JEDEC qualified GaN technology
  • Dynamic RDS(ON)eff production tested
  • Very low QRR
  • Reduced crossover loss
  • RoHS compliant and halogen-free packaging
  • Robust design, defined by:
    • Intrinsic lifetime tests
    • Wide gate safety margin
    • Transient overvoltage capability
Applications
  • Datacom
  • Broad industrial
  • PV inverter
  • Servo motor

TP65H035WS Cascode GaN FET

ImagineManufacturer Part NumberDescriereTehnologieTensiune de la consumator la sursă (Vdss)Available QuantityPrețVedeți detalii
GANFET N-CH 650V 46.5A TO247-3TP65H035WSGANFET N-CH 650V 46.5A TO247-3GaNFET (Cascode FET nitrură de galiu)650 V0 - Immediate$96.23Vedeți detalii
Published: 2018-08-08

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