ROHM Semiconductor

4th Generation SiC MOSFETs

ROHM's 4th generation SiC MOSFETs support 15 V gate-source voltage, improving application design freedom

Image of ROHM’s 4th Generation SiC MOSFETsROHM's 4th generation SiC MOSFETs provide excellent low ON resistance without sacrificing short-circuit withstand time. Features include low switching loss and support for 15 V gate-source voltage that contributes to further device power savings.

Switching Loss/ON Resistance Comparison
    Image of ROHM’s 4th Generation SiC MOSFETs - graph
Features
  • Achieves excellent low ON resistance without sacrificing short-circuit ruggedness
  • Minimizes switching loss by drastically reducing parasitic capacitance
  • Supports 15 V gate-source voltage, improving application design freedom
Applications
  • Solar inverters
  • DC/DC converters
  • Switch mode power supplies
  • Induction heating
  • Motor drives
Published: 2022-06-01

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