Forward-thinking Mindset Powering Energy Infrastructure Evolution - onsemi

onsemi leverages decades of experience in innovative technologies, reliable, highly efficient and quality of next-gen power semiconductors to shorten your development time while exceeding your power density and beating power loss budgets. We are helping you and your manufacturing team sleep better at night knowing you have helped make the world a better place.

  • EV Charging Stations
  • Energy Storage/UPS
  • Solar Inverters
  • SiC MOSFETs
  • SiC Diodes
  • SiC Drivers
  • Power Modules and SiC Hybrid Modules
  • IGBTs
  • Galvanic Isolated Gate Drivers
  • Current Sense Amplifiers
  • Op-Amps: Voltage & Current Sense
  • Voltage Regulations (LDO)
  • AC-DC, DC-DC
    Regulators/Converters

SiC MOSFETs

onsemi 650V SiC MOSFET

650V SiC MOSFETs

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features

  • Low RDSon
  • High Junction Temperature
  • 100% UIL Tested
  • RoHS Compliant
  • High Speed Switching and Low Capacitance
  • 650V rated
  • AEC−Q101 Variants available

Applications

  • DC-DC Converter
  • Boost Inverter
  • Automotive DC/DC
  • Automotive PFC

End Products

  • UPS
  • Solar
  • Power Supply
  • Automotive On Board Charger
  • Automotive DC/DC converter for EV/PHEV

650V SiC MOSFETs

Manufacturer Part Number Description View Details
NTBG015N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
NTBG045N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
NTH4L015N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
NTH4L045N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
NTH4L015N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
onsemi 900V SiC MOSFET

900V SiC MOSFETs

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Learn More

Features

  • 900 V rated
  • Low ON resistance
  • Compact chip size ensures low capacitance and gate charge
  • High-speed switching and low capacitance
  • 100% UIL tested
  • Qualified for automotive according to AEC-Q101

Applications

  • PFC
  • OBC
  • Boost inverters
  • PV charging
  • Automotive DC/DC converters for EV/PHEV
  • Automotive onboard chargers
  • Automotive auxiliary motor drives
  • Network power supplies
  • Server power supplies

900V SiC MOSFETs

Manufacturer Part Number Description View Details
NTBG020N090SC1 SICFET N-CH 900V 9.8A/112A D2PAK View Details
NTHL020N090SC1 SICFET N-CH 900V 118A TO247-3 View Details
NTHL060N090SC1 SICFET N-CH 900V 46A TO247-3 View Details
NVBG020N090SC1 SICFET N-CH 900V 9.8A/112A D2PAK View Details
NVHL020N090SC1 SICFET N-CH 900V 118A TO247-3 View Details

onsemi 1200V SiC MOSFET

M3S 1200V SiC MOSFETs

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

Learn More

Features

  • TO247-4LD package for low common source inductance
  • 15V to 18V Gate Drive
  • New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested

Benefits

  • Reduced EON losses
  • 18V for best performance; 15V for compatibility with IGBT driver circuits
  • Improved power density
  • Improved robustness to unexpected incoming voltage spikes or ringing

Applications

  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion

End Products

  • UPS
  • Electric Vehicle Chargers
  • Solar Inverters
  • Energy Storage Systems

1200V SiC MOSFETs

Manufacturer Part Number Description View Details
NTBG020N120SC1 SICFET N-CH 1200V 8.6A/98A D2PAK View Details
NTHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 View Details
NVHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 View Details
NTHL080N120SC1 SICFET N-CH 1200V 44A TO247-3 View Details
NVBG020N120SC1 MOSFET N-CH 1200V 8.6A/98A D2PAK View Details
NVHL080N120SC1 SICFET N-CH 1200V 44A TO247-3 View Details

SiC Diodes

650V SiC Diode

650V SiC Diodes

onsemi's silicon carbide (SiC) Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance make silicon carbide the next generation of power semiconductors. System benefits include high efficiency, higher operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Learn More

Features

  • Easy to parallel
  • High surge current capacitance
  • Max junction temperature: +175°C
  • No reverse recovery/no forward recovery
  • Higher switching frequency
  • Low forward voltage (VF)
  • Positive temperature coefficient
  • AEC-Q101 Qualified and PPAP capable

Benefits

  • Automotive HEV-EV DC/DC converters
  • Automotive HEV-EV onboard chargers
  • Industrial power
  • PFC
  • Solar
  • UPS
  • Welding

650V SiC Diodes

Manufacturer Part Number Description View Details
FFSB0665B 650V 6A SIC SBD GEN1.5 View Details
FFSB0865B 650V 8A SIC SBD GEN1.5 View Details
FFSP08120A DIODE SCHOTTKY 1.2KV 8A TO220-2 View Details
FFSP10120A DIODE SCHOTTKY 1.2KV 10A TO220-2 View Details
FFSP15120A DIODE SCHOTTKY 1.2KV 15A TO220-2 View Details
FFSH20120A DIODE SCHOTTKY 1.2KV 30A TO247-2 View Details
FFSP3065A DIODE SCHOTTKY 650V 30A TO220-2 View Details
FFSM0665A 650V 6A SIC SBD View Details
FFSD1065A 650V 10A SIC SBD View Details
FFSB1065B-F085 650V 10A SIC SBD GEN1.5 View Details
FFSB2065B-F085 SIC DIODE 650V View Details
FFSM1265A 650V 12A SIC SBD View Details
FFSD08120A 1200V 8A SIC SBD View Details
FFSD10120A DIODE SCHOTTKY 1.2KV TO252 View Details
FFSD1065B-F085 650V 10A SIC SBD GEN1.5 View Details
FFSB3065B-F085 650V 30A SIC SBD GEN1.5 View Details
FFSB10120A-F085 1200V 10A AUTO SIC SBD View Details
FFSB20120A-F085 1200V 20A AUTO SIC SBD View Details
FFSP05120A DIODE SCHOTTKY 1.2KV TO220-2 View Details
FFSP20120A DIODE SCHOT 1200V 20A TO220-2L View Details

1200V SiC Diode

1200V SiC Diodes

onsemi's 1200 V SiC MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon. The low ON resistance and compact chip size ensure low capacitance and gate charge. System benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Learn More

Features

  • 1200 V rated
  • Low ON resistance
  • Compact chip size ensure low capacitance and gate charge
  • High-speed switching and low capacitance
  • 100% UIL tested
  • Qualified for automotive according to AEC-Q101

Applications

  • PFC
  • OBC
  • Boost inverters
  • PV chargers
  • Automotive DC/DC converters for EV/PHEV
  • Automotive onboard chargers
  • Automotive auxiliary motor drives
  • Solar inverters
  • Network power supplies
  • Server power supplies

1200V SiC Diodes

Manufacturer Part Number Description View Details
NTBG020N120SC1 SICFET N-CH 1200V 8.6A/98A D2PAK View Details
NTHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 View Details
NVHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 View Details
NTHL080N120SC1 SICFET N-CH 1200V 44A TO247-3 View Details
NVBG020N120SC1 MOSFET N-CH 1200V 8.6A/98A D2PAK View Details
NVHL080N120SC1 SICFET N-CH 1200V 44A TO247-3 View Details

1700V SiC Diode

1700V SiC Diodes

onsemi‘s 1700 V SiC Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance set SiC as the next generation of power semiconductors. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Learn More

Features

  • Ease of paralleling
  • High surge current capacitance
  • Max junction temperature: +175°C
  • No reverse recovery/no forward recovery
  • Higher switching frequency
  • Low forward voltage (VF)
  • Positive temperature coefficient
  • AEC-Q101 Qualified and PPAP capable

Applications

  • Automotive HEV-EV DC-DC converters
  • Automotive HEV-EV onboard chargers
  • Industrial power
  • PFC
  • Solar
  • UPS
  • Welding

1700V SiC Diodes

Manufacturer Part Number Description View Details
NDSH25170A SIC JBS 1700V 25A TO247 View Details

SiC Drivers

SiC Drivers

SiC Drivers

onsemi's NCx51705 low-side, single 6 A high-speed driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver can deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn-on and turn-off, switching losses are also minimized. For improved reliability, dv/dt immunity, and even faster turn-off, the NCx51705 can utilize its on-board charge pump to generate a user-selectable negative voltage rail. For isolated applications, the NCx51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high-speed optoisolators.

Learn More

Features

  • High peak output current with split output stages
  • Extended positive voltage rating up to 28 V max
  • User-adjustable built-in negative charge pump (-3.3 V to -8 V)
  • Accessible 5 V reference/bias rail
  • Adjustable undervoltage lockout
  • Fast desaturation function
  • QFN24 package 4 mm x 4 mm
  • Allow independent on/off adjustment
  • Efficient SiC MOSFET operation during the conduction period
  • Fast turn-off and robust dv/dt immunity
  • Minimize complexity of bias supply in isolated gate drive applications
  • Sufficient VGS amplitude to match SiC best performance
  • Self-protection of the design
  • Small and low parasitic inductance package

Applications

  • High-performance inverters
  • High-power motor drivers
  • Totem pole PFCs
  • Industrial and motor drivers
  • UPS and solar inverters
  • High-power DC chargers

SiC Drivers

Manufacturer Part Number Description View Details
NCP51705MNTXG IC GATE DRVR LOW-SIDE 24QFN View Details
NCV51705MNTWG IC GATE DRVR LOW-SIDE 24QFN View Details

Isolated High Current Gate Driver

Isolated High Current Gate Drivers

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.

Learn More

Isolated High Current Gate Drivers

Manufacturer Part Number Description View Details
NCD57000DWR2G IC GATE DRVR HALF-BRIDGE 16SOIC View Details
NCD57001DWR2G IC GATE DRVR HALF-BRIDGE 16SOIC View Details
NCV57001DWR2G IC IGBT GATE DRIVER View Details
NCV57000DWR2G IC IGBT GATE DRIVER View Details

Power Modules and SiC Hybrid Modules

SiC Hybrid Modules

Power Modules and SiC Hybrid Modules

Features

  1. Optimized for superior performance
  2. Lower thermal resistance than discrete devices
  3. Easy to mount packages to fit industry standard pinouts

Part Number Description View Details
NXH006P120MNF2PTG SiC Modules, Half Bridge 2-PACK 1200 V, 6 mohm SiC MOSFET, F2 Package View Details

IGBTs

IGBTs

IGBTs

onsemi’s IGBTs offer optimum performance by balancing VCE(sat) and Eoff losses and controllable turnoff Vce overshoot. They also offer maximum reliability and performance from positive temperature co-efficient, low saturation voltage (VCE(sat)), very low switching and conduction losses, and fast switching. They are well suited for high performance power conversion applications and are engineered and qualified for automotive and industrial applications.

Part Number Description View Details
FGHL75T65MQD IGBT - 650 V 75 A FS4 medium switching speed IGBT View Details
FGY75T95SQDT IGBT - 950 V 75 A Field stop trench IGBT View Details
FGY60T120SQDN IGBT, Ultra Field Stop -1200V 60A View Details

Galvanic Isolated Gate Drivers

Galvanic Isolated Gate Drivers

Galvanic Isolated Gate Drivers

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.

Part Number Description View Details
NCD57000DWR2G IC GATE DRVR HALF-BRIDGE 16SOIC View Details
NCD57001DWR2G IC GATE DRVR HALF-BRIDGE 16SOIC View Details
NCV57001DWR2G IC IGBT GATE DRIVER View Details
NCV57000DWR2G IC IGBT GATE DRIVER View Details

Current Sense Amplifiers

Current Sense Amplifiers

Current Sense Amplifiers

Current sense amplifiers provide critical information that can assist in the safety and diagnostic functions of a system by monitoring current consumption. They integrate external resistors for a higher-accuracy, smaller footprint, to support standalone op-amps.

Learn More
Part Number Description View Details
NCS2002SN1T1G IC OPAMP GP 1 CIRCUIT 6TSOP View Details
NCS2002SN2T1G IC OPAMP GP 1 CIRCUIT 6TSOP View Details
NCS2004SQ3T2G IC OPAMP GP 1 CIRCUIT SC88A View Details
NCS211RMUTAG IC CURR SENSE 1 CIRCUIT 10UQFN View Details
Part Number Description View Details
STR-CURRENT-SENSE-GEVB CURRENT SENSE AMPLIFIER EVALUATION View Details
SECO-1KW-MDK-GEVK 1KW 600V INDUSTRIAL MOTOR DEVELOP View Details
NCS2200AGEVB BOARD EVAL NCS2200A COMP UDFN6 View Details
NCS2220AGEVB BOARD EVAL FOR NCS2220A UDFN6 View Details

Op-Amps: Voltage & Current Sense

Current Sense Amplifiers

Op-Amps: Voltage & Current Sense

CMOS amplifiers offer rail-to-rail operation, which gives a wider dynamic range. Varying system requirements, and a range from 270 kHz to 10 MHz gives system designers flexibility in amplifier selection. They are also available in several space-saving packages, meeting both power and space constraints for modern system designs.

Learn More
Part Number Description View Details
NCS20166SN2T1G IC OPAMP GP 1 CIRCUIT SC74A View Details
NCV20062DR2G IC OPAMP GP 2 CIRCUIT 8SOIC View Details
NCS2333MUTBG IC OPAMP ZERO-DRIFT 2 CIRC 8UDFN View Details

Voltage Regulators (LDO)

Voltage Regulator

Voltage Regulators (LDO)

Linear Regulators (LDO) provide an optimum solution for low power, space conscious and low noise design requirements. The simplicity of design and few external components make them easy to integrate into the final product. This broad portfolio features high PSRR, low noise, low quiescent current (Iq), low dropout and wide input voltage range. As a market leader, we provide parts that offer industries best performance with a robust design and high-quality manufacturing. Package options include the smallest size in the industry to the larger power packages providing an ideal solution for automotive, industrial, and consumer applications.

Part Number Description View Details
NCP164 300mA LDO Regulator, Ultra-Low Noise, High PSRR with Power Good View Details
NCP715 LDO Regulator, 50 mA, Ultra-Low Iq View Details
NCP730 LDO Regulator, 150 mA, 38 V, 1 uA IQ, with PG View Details

AC-DC, DC-DC Regulators/Converters

AC-DC, DC-DC Regulator/Converter

AC-DC, DC-DC Regulators/Converters

onsemi has full portfolios of offline AC-DC and DC-DC controllers and regulators, and power factor and secondary side controllers that enable high active mode efficiency, low standby mode consumption and power factor correction.

Features

  1. Offline switching controllers; including fixed-frequency flyback & forward PWM controllers, and current mode and voltage mode controllers.
  2. Offline, switching regulators, including current mode, voltage mode, and gated oscillator devices.
  3. Variable CRM, CCM, and DCM power factor controllers that enable power factor correction.
  4. Secondary side, synchronous rectification controllers.
  5. Current mode and voltage mode dc-dc controllers for dc-dc power conversion circuits.

Part Number Description View Details
NCP10670 IC OFFLINE SWITCH MULT TOP 8SOIC View Details
FSL336 IC OFFLINE SWITCH MULT TOP 7DIP View Details
FSL337 IC OFFLINE SWITCH MULT TOP 7DIP View Details
FSL518A/H IC OFFLINE SWITCH FLYBACK 7DIP View Details
FSL538A/H IC OFFLINE SWITCH FLYBACK 7DIP View Details
  • SiC MOSFETs
  • SiC Diodes
  • SiC Drivers
  • Power Modules and SiC Hybrid Modules
  • 650V FS4 IGBTs
  • Galvanic Isolated Gate Drivers
  • AC-DC, DC-DC
    Regulators/Converters
  • Communication
  • Thermal Management Controllers

SiC MOSFETs

onsemi 650V SiC MOSFET

650V SiC MOSFETs

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features

  • Low RDSon
  • High Junction Temperature
  • 100% UIL Tested
  • RoHS Compliant
  • High Speed Switching and Low Capacitance
  • 650V rated
  • AEC−Q101 Variants available

Applications

  • DC-DC Converter
  • Boost Inverter
  • Automotive DC/DC
  • Automotive PFC

End Products

  • UPS
  • Solar
  • Power Supply
  • Automotive On Board Charger
  • Automotive DC/DC converter for EV/PHEV

650V SiC MOSFETs

Manufacturer Part Number Description View Details
NTBG015N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
NTBG045N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
NTH4L015N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
NTH4L045N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
NTH4L015N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
onsemi 900V SiC MOSFET

900V SiC MOSFETs

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Learn More

Features

  • 900 V rated
  • Low ON resistance
  • Compact chip size ensures low capacitance and gate charge
  • High-speed switching and low capacitance
  • 100% UIL tested
  • Qualified for automotive according to AEC-Q101

Applications

  • PFC
  • OBC
  • Boost inverters
  • PV charging
  • Automotive DC/DC converters for EV/PHEV
  • Automotive onboard chargers
  • Automotive auxiliary motor drives
  • Network power supplies
  • Server power supplies

900V SiC MOSFETs

Manufacturer Part Number Description View Details
NTBG020N090SC1 SICFET N-CH 900V 9.8A/112A D2PAK View Details
NTHL020N090SC1 SICFET N-CH 900V 118A TO247-3 View Details
NTHL060N090SC1 SICFET N-CH 900V 46A TO247-3 View Details
NVBG020N090SC1 SICFET N-CH 900V 9.8A/112A D2PAK View Details
NVHL020N090SC1 SICFET N-CH 900V 118A TO247-3 View Details

onsemi 1200V SiC MOSFET

M3S 1200V SiC MOSFETs

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

Learn More

Features

  • TO247-4LD package for low common source inductance
  • 15V to 18V Gate Drive
  • New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested

Benefits

  • Reduced EON losses
  • 18V for best performance; 15V for compatibility with IGBT driver circuits
  • Improved power density
  • Improved robustness to unexpected incoming voltage spikes or ringing

Applications

  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion

End Products

  • UPS
  • Electric Vehicle Chargers
  • Solar Inverters
  • Energy Storage Systems

1200V SiC MOSFETs

Manufacturer Part Number Description View Details
NTBG020N120SC1 SICFET N-CH 1200V 8.6A/98A D2PAK View Details
NTHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 View Details
NVHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 View Details
NTHL080N120SC1 SICFET N-CH 1200V 44A TO247-3 View Details
NVBG020N120SC1 MOSFET N-CH 1200V 8.6A/98A D2PAK View Details
NVHL080N120SC1 SICFET N-CH 1200V 44A TO247-3 View Details

SiC Diodes

650V SiC Diode

650V SiC Diodes

onsemi's silicon carbide (SiC) Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance make silicon carbide the next generation of power semiconductors. System benefits include high efficiency, higher operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Learn More

Features

  • Easy to parallel
  • High surge current capacitance
  • Max junction temperature: +175°C
  • No reverse recovery/no forward recovery
  • Higher switching frequency
  • Low forward voltage (VF)
  • Positive temperature coefficient
  • AEC-Q101 Qualified and PPAP capable

Benefits

  • Automotive HEV-EV DC/DC converters
  • Automotive HEV-EV onboard chargers
  • Industrial power
  • PFC
  • Solar
  • UPS
  • Welding

650V SiC Diodes

Manufacturer Part Number Description View Details
FFSB0665B 650V 6A SIC SBD GEN1.5 View Details
FFSB0865B 650V 8A SIC SBD GEN1.5 View Details
FFSP08120A DIODE SCHOTTKY 1.2KV 8A TO220-2 View Details
FFSP10120A DIODE SCHOTTKY 1.2KV 10A TO220-2 View Details
FFSP15120A DIODE SCHOTTKY 1.2KV 15A TO220-2 View Details
FFSH20120A DIODE SCHOTTKY 1.2KV 30A TO247-2 View Details
FFSP3065A DIODE SCHOTTKY 650V 30A TO220-2 View Details
FFSM0665A 650V 6A SIC SBD View Details
FFSD1065A 650V 10A SIC SBD View Details
FFSB1065B-F085 650V 10A SIC SBD GEN1.5 View Details
FFSB2065B-F085 SIC DIODE 650V View Details
FFSM1265A 650V 12A SIC SBD View Details
FFSD08120A 1200V 8A SIC SBD View Details
FFSD10120A DIODE SCHOTTKY 1.2KV TO252 View Details
FFSD1065B-F085 650V 10A SIC SBD GEN1.5 View Details
FFSB3065B-F085 650V 30A SIC SBD GEN1.5 View Details
FFSB10120A-F085 1200V 10A AUTO SIC SBD View Details
FFSB20120A-F085 1200V 20A AUTO SIC SBD View Details
FFSP05120A DIODE SCHOTTKY 1.2KV TO220-2 View Details
FFSP20120A DIODE SCHOT 1200V 20A TO220-2L View Details

1200V SiC Diode

1200V SiC Diodes

onsemi's 1200 V SiC MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon. The low ON resistance and compact chip size ensure low capacitance and gate charge. System benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Learn More

Features

  • 1200 V rated
  • Low ON resistance
  • Compact chip size ensure low capacitance and gate charge
  • High-speed switching and low capacitance
  • 100% UIL tested
  • Qualified for automotive according to AEC-Q101

Applications

  • PFC
  • OBC
  • Boost inverters
  • PV chargers
  • Automotive DC/DC converters for EV/PHEV
  • Automotive onboard chargers
  • Automotive auxiliary motor drives
  • Solar inverters
  • Network power supplies
  • Server power supplies

1200V SiC Diodes

Manufacturer Part Number Description View Details
NTBG020N120SC1 SICFET N-CH 1200V 8.6A/98A D2PAK View Details
NTHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 View Details
NVHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 View Details
NTHL080N120SC1 SICFET N-CH 1200V 44A TO247-3 View Details
NVBG020N120SC1 MOSFET N-CH 1200V 8.6A/98A D2PAK View Details
NVHL080N120SC1 SICFET N-CH 1200V 44A TO247-3 View Details

1700V SiC Diode

1700V SiC Diodes

onsemi‘s 1700 V SiC Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance set SiC as the next generation of power semiconductors. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Learn More

Features

  • Ease of paralleling
  • High surge current capacitance
  • Max junction temperature: +175°C
  • No reverse recovery/no forward recovery
  • Higher switching frequency
  • Low forward voltage (VF)
  • Positive temperature coefficient
  • AEC-Q101 Qualified and PPAP capable

Applications

  • Automotive HEV-EV DC-DC converters
  • Automotive HEV-EV onboard chargers
  • Industrial power
  • PFC
  • Solar
  • UPS
  • Welding

1700V SiC Diodes

Manufacturer Part Number Description View Details
NDSH25170A SIC JBS 1700V 25A TO247 View Details

SiC Drivers

SiC Drivers

SiC Drivers

onsemi's NCx51705 low-side, single 6 A high-speed driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver can deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn-on and turn-off, switching losses are also minimized. For improved reliability, dv/dt immunity, and even faster turn-off, the NCx51705 can utilize its on-board charge pump to generate a user-selectable negative voltage rail. For isolated applications, the NCx51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high-speed optoisolators.

Learn More

Features

  • High peak output current with split output stages
  • Extended positive voltage rating up to 28 V max
  • User-adjustable built-in negative charge pump (-3.3 V to -8 V)
  • Accessible 5 V reference/bias rail
  • Adjustable undervoltage lockout
  • Fast desaturation function
  • QFN24 package 4 mm x 4 mm
  • Allow independent on/off adjustment
  • Efficient SiC MOSFET operation during the conduction period
  • Fast turn-off and robust dv/dt immunity
  • Minimize complexity of bias supply in isolated gate drive applications
  • Sufficient VGS amplitude to match SiC best performance
  • Self-protection of the design
  • Small and low parasitic inductance package

Applications

  • High-performance inverters
  • High-power motor drivers
  • Totem pole PFCs
  • Industrial and motor drivers
  • UPS and solar inverters
  • High-power DC chargers

SiC Drivers

Manufacturer Part Number Description View Details
NCP51705MNTXG IC GATE DRVR LOW-SIDE 24QFN View Details
NCV51705MNTWG IC GATE DRVR LOW-SIDE 24QFN View Details

Isolated High Current Gate Driver

Isolated High Current Gate Drivers

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.

Learn More

Isolated High Current Gate Drivers

Manufacturer Part Number Description View Details
NCD57000DWR2G IC GATE DRVR HALF-BRIDGE 16SOIC View Details
NCD57001DWR2G IC GATE DRVR HALF-BRIDGE 16SOIC View Details
NCV57001DWR2G IC IGBT GATE DRIVER View Details
NCV57000DWR2G IC IGBT GATE DRIVER View Details

Power Modules and SiC Hybrid Modules

SiC Hybrid Modules

Power Modules and SiC Hybrid Modules

Features

  • Optimized for superior performance
  • Lower thermal resistance than discrete devices
  • Easy to mount packages to fit industry standard pinouts
Part Number Description View Details
NXH100B120H3Q0PTG Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode View Details
NXH80B120MNQ0SNG Full SiC MOSFET Module, Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode View Details

650V FS4 IGBTs

IGBTs

650V FS4 IGBTs

onsemi’s IGBTs offer optimum performance by balancing VCE(sat) and Eoff losses and controllable turnoff Vce overshoot. They also offer maximum reliability and performance from positive temperature co-efficient, low saturation voltage (VCE(sat)), very low switching and conduction losses, and fast switching. They are well suited for high performance power conversion applications and are engineered and qualified for automotive and industrial applications.

Part Number Description View Details
FGH40T65SQD-F155 IGBT FS 4 View Details
NGTB25N120FL3WG IGBT, Ultra Field Stop - 1200V 25A View Details
NGTB40N120S3WG IGBT, 1200V, 40A Low VF FSIII View Details

Galvanic Isolated Gate Drivers

Galvanic Isolated Gate Drivers

Galvanic Isolated Gate Drivers

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.

Part Number Description View Details
NCD57000DWR2G IC GATE DRVR HALF-BRIDGE 16SOIC View Details
NCD57001DWR2G IC GATE DRVR HALF-BRIDGE 16SOIC View Details
NCV57001DWR2G IC IGBT GATE DRIVER View Details
NCV57000DWR2G IC IGBT GATE DRIVER View Details

AC-DC, DC-DC Regulators/Converters

AC-DC, DC-DC Regulator/Converter

AC-DC, DC-DC Regulators/Converters

onsemi has full portfolios of offline AC-DC and DC-DC controllers and regulators, and power factor and secondary side controllers that enable high active mode efficiency, low standby mode consumption and power factor correction.

Features

  1. Offline switching controllers; including fixed-frequency flyback & forward PWM controllers, and current mode and voltage mode controllers.
  2. Offline, switching regulators, including current mode, voltage mode, and gated oscillator devices.
  3. Variable CRM, CCM, and DCM power factor controllers that enable power factor correction.
  4. Secondary side, synchronous rectification controllers.
  5. Current mode and voltage mode dc-dc controllers for dc-dc power conversion circuits.

Part Number Description View Details
NCP10670 IC OFFLINE SWITCH MULT TOP 8SOIC View Details
FSL336 IC OFFLINE SWITCH MULT TOP 7DIP View Details
FSL337 IC OFFLINE SWITCH MULT TOP 7DIP View Details
FSL518A/H IC OFFLINE SWITCH FLYBACK 7DIP View Details
FSL538A/H IC OFFLINE SWITCH FLYBACK 7DIP View Details

Communication

CAN

CAN

The Wired Transceivers from onsemi are ideally suited to In-Vehicle Networking, Industrial Networking, De-centralized Door Electronic Systems, Body Control Units (BCUs), Home, Building, and Process Automation, Environmental Monitoring and Smart Energy applications. The portfolio also includes AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive industry applications.

Part Number Description View Details
NCV7349 CAN Transceiver, High Speed, Low Power View Details
NCV7351 CAN/CAN FD Transceiver, High Speed View Details
NCV7357 CAN FD Transceiver, High Speed View Details
NCV7343 CAN FD Transceiver, High Speed, Low Power View Details
NCV7344 CAN FD Transceiver, High Speed, Low Power View Details
BLE

BLE

Enabled with Bluetooth® Low Energy wireless connectivity, the RSL15 addresses the growing demand of connected industrial applications for security without sacrificing power consumption.

Part Number Description View Details
RSL10 Radio SoC, Bluetooth® 5 Certified, SDK 3.5 / SIP View Details
RSL15 Bluetooth® 5.2 Secure Wireless MCU View Details

Thermal Management Controllers

Thermal Management Controllers

Thermal Management Controllers

Part Number Description View Details
LV8324C 24 V Single Phase BLDC Motor Drive (Fan Blower) View Details
NCT375 Temp Sensor (w/ I2C) View Details
NCP1340 Primary, Secondary Side Controller View Details
NCP4306 Primary, Secondary Side Controller View Details
  • SiC MOSFETs
  • SiC Diodes
  • SiC Drivers
  • Power Modules and SiC Hybrid Modules
  • Communication
  • Galvanic Isolated Gate Drivers
  • Digital Isolators
  • AC/DC - DC/DC Regulators
  • AC/DC - DC/DC Controllers
  • DC/DC Converters

SiC MOSFETs

onsemi 650V SiC MOSFET

650V SiC MOSFETs

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features

  • Low RDSon
  • High Junction Temperature
  • 100% UIL Tested
  • RoHS Compliant
  • High Speed Switching and Low Capacitance
  • 650V rated
  • AEC−Q101 Variants available

Applications

  • DC-DC Converter
  • Boost Inverter
  • Automotive DC/DC
  • Automotive PFC

End Products

  • UPS
  • Solar
  • Power Supply
  • Automotive On Board Charger
  • Automotive DC/DC converter for EV/PHEV

650V SiC MOSFETs

Manufacturer Part Number Description View Details
NTBG015N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
NTBG045N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
NTH4L015N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
NTH4L045N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
NTH4L015N065SC1 SILICON CARBIDE MOSFET, NCHANNEL View Details
onsemi 900V SiC MOSFET

900V SiC MOSFETs

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Learn More

Features

  • 900 V rated
  • Low ON resistance
  • Compact chip size ensures low capacitance and gate charge
  • High-speed switching and low capacitance
  • 100% UIL tested
  • Qualified for automotive according to AEC-Q101

Applications

  • PFC
  • OBC
  • Boost inverters
  • PV charging
  • Automotive DC/DC converters for EV/PHEV
  • Automotive onboard chargers
  • Automotive auxiliary motor drives
  • Network power supplies
  • Server power supplies

900V SiC MOSFETs

Manufacturer Part Number Description View Details
NTBG020N090SC1 SICFET N-CH 900V 9.8A/112A D2PAK View Details
NTHL020N090SC1 SICFET N-CH 900V 118A TO247-3 View Details
NTHL060N090SC1 SICFET N-CH 900V 46A TO247-3 View Details
NVBG020N090SC1 SICFET N-CH 900V 9.8A/112A D2PAK View Details
NVHL020N090SC1 SICFET N-CH 900V 118A TO247-3 View Details

onsemi 1200V SiC MOSFET

M3S 1200V SiC MOSFETs

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

Learn More

Features

  • TO247-4LD package for low common source inductance
  • 15V to 18V Gate Drive
  • New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested

Benefits

  • Reduced EON losses
  • 18V for best performance; 15V for compatibility with IGBT driver circuits
  • Improved power density
  • Improved robustness to unexpected incoming voltage spikes or ringing

Applications

  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion

End Products

  • UPS
  • Electric Vehicle Chargers
  • Solar Inverters
  • Energy Storage Systems

1200V SiC MOSFETs

Manufacturer Part Number Description View Details
NTBG020N120SC1 SICFET N-CH 1200V 8.6A/98A D2PAK View Details
NTHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 View Details
NVHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 View Details
NTHL080N120SC1 SICFET N-CH 1200V 44A TO247-3 View Details
NVBG020N120SC1 MOSFET N-CH 1200V 8.6A/98A D2PAK View Details
NVHL080N120SC1 SICFET N-CH 1200V 44A TO247-3 View Details

SiC Diodes

650V SiC Diode

650V SiC Diodes

onsemi's silicon carbide (SiC) Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance make silicon carbide the next generation of power semiconductors. System benefits include high efficiency, higher operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Learn More

Features

  • Easy to parallel
  • High surge current capacitance
  • Max junction temperature: +175°C
  • No reverse recovery/no forward recovery
  • Higher switching frequency
  • Low forward voltage (VF)
  • Positive temperature coefficient
  • AEC-Q101 Qualified and PPAP capable

Benefits

  • Automotive HEV-EV DC/DC converters
  • Automotive HEV-EV onboard chargers
  • Industrial power
  • PFC
  • Solar
  • UPS
  • Welding

650V SiC Diodes

Manufacturer Part Number Description View Details
FFSB0665B 650V 6A SIC SBD GEN1.5 View Details
FFSB0865B 650V 8A SIC SBD GEN1.5 View Details
FFSP08120A DIODE SCHOTTKY 1.2KV 8A TO220-2 View Details
FFSP10120A DIODE SCHOTTKY 1.2KV 10A TO220-2 View Details
FFSP15120A DIODE SCHOTTKY 1.2KV 15A TO220-2 View Details
FFSH20120A DIODE SCHOTTKY 1.2KV 30A TO247-2 View Details
FFSP3065A DIODE SCHOTTKY 650V 30A TO220-2 View Details
FFSM0665A 650V 6A SIC SBD View Details
FFSD1065A 650V 10A SIC SBD View Details
FFSB1065B-F085 650V 10A SIC SBD GEN1.5 View Details
FFSB2065B-F085 SIC DIODE 650V View Details
FFSM1265A 650V 12A SIC SBD View Details
FFSD08120A 1200V 8A SIC SBD View Details
FFSD10120A DIODE SCHOTTKY 1.2KV TO252 View Details
FFSD1065B-F085 650V 10A SIC SBD GEN1.5 View Details
FFSB3065B-F085 650V 30A SIC SBD GEN1.5 View Details
FFSB10120A-F085 1200V 10A AUTO SIC SBD View Details
FFSB20120A-F085 1200V 20A AUTO SIC SBD View Details
FFSP05120A DIODE SCHOTTKY 1.2KV TO220-2 View Details
FFSP20120A DIODE SCHOT 1200V 20A TO220-2L View Details

1200V SiC Diode

1200V SiC Diodes

onsemi's 1200 V SiC MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon. The low ON resistance and compact chip size ensure low capacitance and gate charge. System benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Learn More

Features

  • 1200 V rated
  • Low ON resistance
  • Compact chip size ensure low capacitance and gate charge
  • High-speed switching and low capacitance
  • 100% UIL tested
  • Qualified for automotive according to AEC-Q101

Applications

  • PFC
  • OBC
  • Boost inverters
  • PV chargers
  • Automotive DC/DC converters for EV/PHEV
  • Automotive onboard chargers
  • Automotive auxiliary motor drives
  • Solar inverters
  • Network power supplies
  • Server power supplies

1200V SiC Diodes

Manufacturer Part Number Description View Details
NTBG020N120SC1 SICFET N-CH 1200V 8.6A/98A D2PAK View Details
NTHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 View Details
NVHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 View Details
NTHL080N120SC1 SICFET N-CH 1200V 44A TO247-3 View Details
NVBG020N120SC1 MOSFET N-CH 1200V 8.6A/98A D2PAK View Details
NVHL080N120SC1 SICFET N-CH 1200V 44A TO247-3 View Details

1700V SiC Diode

1700V SiC Diodes

onsemi‘s 1700 V SiC Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance set SiC as the next generation of power semiconductors. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Learn More

Features

  • Ease of paralleling
  • High surge current capacitance
  • Max junction temperature: +175°C
  • No reverse recovery/no forward recovery
  • Higher switching frequency
  • Low forward voltage (VF)
  • Positive temperature coefficient
  • AEC-Q101 Qualified and PPAP capable

Applications

  • Automotive HEV-EV DC-DC converters
  • Automotive HEV-EV onboard chargers
  • Industrial power
  • PFC
  • Solar
  • UPS
  • Welding

1700V SiC Diodes

Manufacturer Part Number Description View Details
NDSH25170A SIC JBS 1700V 25A TO247 View Details

SiC Drivers

SiC Drivers

SiC Drivers

onsemi's NCx51705 low-side, single 6 A high-speed driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver can deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn-on and turn-off, switching losses are also minimized. For improved reliability, dv/dt immunity, and even faster turn-off, the NCx51705 can utilize its on-board charge pump to generate a user-selectable negative voltage rail. For isolated applications, the NCx51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high-speed optoisolators.

Learn More

Features

  • High peak output current with split output stages
  • Extended positive voltage rating up to 28 V max
  • User-adjustable built-in negative charge pump (-3.3 V to -8 V)
  • Accessible 5 V reference/bias rail
  • Adjustable undervoltage lockout
  • Fast desaturation function
  • QFN24 package 4 mm x 4 mm
  • Allow independent on/off adjustment
  • Efficient SiC MOSFET operation during the conduction period
  • Fast turn-off and robust dv/dt immunity
  • Minimize complexity of bias supply in isolated gate drive applications
  • Sufficient VGS amplitude to match SiC best performance
  • Self-protection of the design
  • Small and low parasitic inductance package

Applications

  • High-performance inverters
  • High-power motor drivers
  • Totem pole PFCs
  • Industrial and motor drivers
  • UPS and solar inverters
  • High-power DC chargers

SiC Drivers

Manufacturer Part Number Description View Details
NCP51705MNTXG IC GATE DRVR LOW-SIDE 24QFN View Details
NCV51705MNTWG IC GATE DRVR LOW-SIDE 24QFN View Details

Isolated High Current Gate Driver

Isolated High Current Gate Drivers

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.

Learn More

Isolated High Current Gate Drivers

Manufacturer Part Number Description View Details
NCD57000DWR2G IC GATE DRVR HALF-BRIDGE 16SOIC View Details
NCD57001DWR2G IC GATE DRVR HALF-BRIDGE 16SOIC View Details
NCV57001DWR2G IC IGBT GATE DRIVER View Details
NCV57000DWR2G IC IGBT GATE DRIVER View Details

Power Modules and SiC Hybrid Modules

SiC Hybrid Modules

Power Modules and SiC Hybrid Modules

Features

  • Optimized for superior performance
  • Lower thermal resistance than discrete devices
  • Easy to mount packages to fit industry standard pinouts
Part Number Description View Details
NXH100B120H3Q0PTG Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode View Details
NXH80B120MNQ0SNG Full SiC MOSFET Module, Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode View Details

Communication

CAN

CAN

The Wired Transceivers from onsemi are ideally suited to In-Vehicle Networking, Industrial Networking, De-centralized Door Electronic Systems, Body Control Units (BCUs), Home, Building, and Process Automation, Environmental Monitoring and Smart Energy applications. The portfolio also includes AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive industry applications.

Part Number Description View Details
NCV7349 CAN Transceiver, High Speed, Low Power View Details
NCV7351 CAN/CAN FD Transceiver, High Speed View Details
NCV7357 CAN FD Transceiver, High Speed View Details
NCV7343 CAN FD Transceiver, High Speed, Low Power View Details
NCV7344 CAN FD Transceiver, High Speed, Low Power View Details
BLE

BLE

Enabled with Bluetooth® Low Energy wireless connectivity, the RSL15 addresses the growing demand of connected industrial applications for security without sacrificing power consumption.

Part Number Description View Details
RSL10 Radio SoC, Bluetooth® 5 Certified, SDK 3.5 / SIP View Details
RSL15 Bluetooth® 5.2 Secure Wireless MCU View Details

Galvanic Isolated Gate Drivers

Galvanic Isolated Gate Drivers

Galvanic Isolated Gate Drivers

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.

Part Number Description View Details
NCD57000DWR2G IC GATE DRVR HALF-BRIDGE 16SOIC View Details
NCD57001DWR2G IC GATE DRVR HALF-BRIDGE 16SOIC View Details
NCV57001DWR2G IC IGBT GATE DRIVER View Details
NCV57000DWR2G IC IGBT GATE DRIVER View Details

Digital Isolators

Digital Isolators

Digital Isolators

Digital Isolators from onsemi use a high frequency modulated signal to transmit high speed digital data across a capacitive isolation barrier. The signal is then demodulated on the other side of the barrier, creating a high voltage isolated data transceiver. By using digital technology (eg. Manchester Encoding/Decoding, Digital parameters tracking) the Digital Isolator is able to maintain consistent performance across a wide temperature range and over the operational lifetime of the part.

Part Number Description View Details
NCID9210 I2C, SPI Digital Isolator 5000Vrms 2 Channel 50Mbps 100kV/µs CMTI 16-SOIC (0.295", 7.50mm Width) View Details
NCID9210R2 I2C, SPI Digital Isolator 5000Vrms 2 Channel 50Mbps 100kV/µs CMTI 16-SOIC (0.295", 7.50mm Width) View Details
NCID9211R2 I2C, SPI Digital Isolator 5000Vrms 2 Channel 50Mbps 100kV/µs CMTI 16-SOIC (0.295", 7.50mm Width) View Details
NCID9401R2 I2C, SPI Digital Isolator 5000Vrms 4 Channel 10Mbps 100kV/µs CMTI 16-SOIC (0.295", 7.50mm Width) View Details
NCID9401 I2C, SPI Digital Isolator 5000Vrms 4 Channel 10Mbps 100kV/µs CMTI 16-SOIC (0.295", 7.50mm Width) View Details
NCID9411 I2C, SPI Digital Isolator 5000Vrms 4 Channel 10Mbps 100kV/µs CMTI 16-SOIC (0.295", 7.50mm Width) View Details
NCID9411R2 I2C, SPI Digital Isolator 5000Vrms 4 Channel 10Mbps 100kV/µs CMTI 16-SOIC (0.295", 7.50mm Width) View Details
NCD57201DR2G 1.9A, 2.3A Gate Driver Capacitive Coupling 1000Vrms 1 Channel 8-SOIC View Details
NCV57200DR2G Half-Bridge Gate Driver IC Non-Inverting 8-SOIC View Details

AC-DC, DC-DC Regulators

AC-DC, DC-DC Regulator/Converter

AC/DC - DC/DC Regulators

onsemi has full portfolios of offline AC-DC and DC-DC controllers and regulators, and power factor and secondary side controllers that enable high active mode efficiency, low standby mode consumption and power factor correction.

  1. Offline switching controllers; including fixed-frequency flyback & forward PWM controllers, and current mode and voltage mode controllers.
  2. Offline, switching regulators, including current mode, voltage mode, and gated oscillator devices.
  3. Variable CRM, CCM, and DCM power factor controllers that enable power factor correction.
  4. Secondary side, synchronous rectification controllers.
  5. Current mode and voltage mode dc-dc controllers for dc-dc power conversion circuits.
Part Number Description View Details
NCP10670 Off-line Switchers (flyback w/ integrated power switch) View Details
FSL336 Off-line Switchers (flyback w/ integrated power switch) View Details
FSL337 Converter Offline Buck, Buck-Boost, Flyback Topology 50kHz 7-DIP View Details
FSL518A/H Off-line Switchers (flyback w/ integrated power switch) View Details
FSL538A/H Off-line Switchers (flyback w/ integrated power switch) View Details

AC/DC - DC/DC Controllers

AC-DC, DC-DC Regulator/Converter

AC/DC - DC/DC Controllers

onsemi has full portfolios of offline AC-DC and DC-DC controllers and regulators, and power factor and secondary side controllers that enable high active mode efficiency, low standby mode consumption and power factor correction.

  1. Offline switching controllers; including fixed-frequency flyback & forward PWM controllers, and current mode and voltage mode controllers.
  2. Offline, switching regulators, including current mode, voltage mode, and gated oscillator devices.
  3. Variable CRM, CCM, and DCM power factor controllers that enable power factor correction.
  4. Secondary side, synchronous rectification controllers.
  5. Current mode and voltage mode dc-dc controllers for dc-dc power conversion circuits.
Part Number Description View Details
NCP1252 PWM Controller, Current Mode, for Forward and Flyback Applications View Details
NCP12700 Ultra Wide Input Current Mode PWM Controller View Details
NCP136x Automotive Primary Side PWM Controller for Low Power Offline SMPS View Details
NCP1568 AC-DC Active Clamp Flyback PWM Controller View Details
NCP4306 Primary, Secondary Side Controller View Details

DC/DC Converters

DC/DC Converters

DC/DC Converters

Part Number Description View Details
NCP3237MNTXG Buck Switching Regulator IC Positive Adjustable 0.6V 1 Output 8A 18-VFQFN View Details
FAN49100AUC330X Buck-Boost Switching Regulator IC Positive Fixed 3.3V 1 Output 2A 20-UFBGA, WLCSP View Details
FAN49103AUC340X Buck-Boost Switching Regulator IC Positive Programmable (Fixed) 2.8V, 3.4V 1 Output 2.5A 20-UFBGA, WLCSP View Details
FAN53555UC08X Switching Regulator IC Output View Details
FAN53555BUC79X Switching Regulator IC Output View Details
FAN53555UC09X Switching Regulator IC Output View Details
FAN5910UCX Switching Regulator IC Output View Details
FAN48610UC50X Boost Switching Regulator IC Positive Fixed 5V 1 Output 1A (Switch) 9-UFBGA, WLCSP View Details
FAN48610BUC50X Boost Switching Regulator IC Positive Fixed 5V 1 Output 1A (Switch) 9-UFBGA, WLCSP View Details
FAN53880UC001X Switching Regulator IC Output View Details
NCP5252MNTXG Buck Switching Regulator IC Positive Adjustable 0.6V 1 Output 2A 16-VFQFN Exposed Pad View Details
NCP3064MNTXG Buck, Boost Switching Regulator IC Positive or Negative Adjustable 1.25V 1 Output 1.5A (Switch) 8-VDFN Exposed Pad View Details
NCP3064BDR2G Buck, Boost Switching Regulator IC Positive or Negative Adjustable 1.25V 1 Output 1.5A (Switch) 8-SOIC (0.154", 3.90mm Width) View Details
NCP3064DR2G Buck, Boost Switching Regulator IC Positive or Negative Adjustable 1.25V 1 Output 1.5A (Switch) 8-SOIC (0.154", 3.90mm Width) View Details
NCP3064MNTXG Buck, Boost Switching Regulator IC Positive or Negative Adjustable 1.25V 1 Output 1.5A (Switch) 8-VDFN Exposed Pad View Details
FAN53610AUC33X Buck Switching Regulator IC Positive Fixed 3.3V 1 Output 1A 6-UFBGA, WLCSP View Details