Reengineering Silicon Power Devices: How to improve both conduction and switching losses
This deep-dive explains how to reduce both conduction and switching losses without traditional tradeoffs. Learn key concepts like RDS(on), QSW, and EOSS, and see real boost converter test results demonstrating improved efficiency, performance, and reliability versus conventional silicon and GaN solutions.
Part List
| Imagine | Manufacturer Part Number | Descriere | Tip FET | Tehnologie | Tensiune de la consumator la sursă (Vdss) | Available Quantity | Preț | Vedeți detalii | |
|---|---|---|---|---|---|---|---|---|---|
![]() | ![]() | IS20M5R5S1T | MOSFET N-CH 200V 151A TOLL | Canal-N | MOSFET (oxid metalic) | 200 V | 100 - Immediate | $42.21 | Vedeți detalii |
![]() | ![]() | IS20M6R3S1P | MOSFET N-CH 200V 172A TO-220 | Canal-N | MOSFET (oxid metalic) | 200 V | 977 - Immediate | $32.34 | Vedeți detalii |
![]() | ![]() | IS20M028S1C | MOSFET N-CH 200V 45A PDFN-8 | Canal-N | MOSFET (oxid metalic) | 200 V | 3106 - Immediate | $15.93 | Vedeți detalii |
![]() | ![]() | IS20M028S1P | MOSFET N-CH 200V 41A TO-220 | Canal-N | MOSFET (oxid metalic) | 200 V | 991 - Immediate | $18.25 | Vedeți detalii |
![]() | ![]() | IS15M7R1S1C | MOSFET N-CH 150V 133A PDFN-8 | Canal-N | MOSFET (oxid metalic) | 150 V | 0 | $25.54 | Vedeți detalii |






