Smart Watch Solution

Toshiba’s smart watch solutions get more performance in a smaller package

Image of Toshiba's Smart Watch Solution Designing power circuitry for smart watches and other wearables can be a challenge due to the expectations of today's consumer: more functionality, longer battery life, and smaller size. Toshiba's discrete components increase available board space and reduce passive current consumption to ensure long battery life. Toshiba offers tiny MOSFETs, diodes, and transistors in addition to feature-rich ICs such as LDO regulators, load switches, and the intelligent eFuse IC.

Power Supply Circuit Solutions

Wireless or contact charging presents design challenges with control and protection from the outside world, whether it is a short circuit condition or EMI.

Toshiba load switches or eFuse ICs can provide precise control in addition to overvoltage and overcurrent protection. These ICs are supported by various FETs and diodes.

Beyond the PMIC, there are requirements for LDOs and switches designed for rails leading to sensitive sensors, chipsets, and other modules. Performance is maximized by implementing low IQ load switches and LDOs which come in tiny wafer-level chip-scale packages.

Image of Toshiba's Power Supply Circuit Solutions Diagram

Interface Circuit Solutions

Another consideration is the interface side of any design. This involves the subsystem which manages sensor outputs and controls displays or wireless modules.

Sensors are becoming increasingly smaller and, as such, require ultra-low offset voltage and low noise op amps to help bring the recorded signal to a readable level. Toshiba offers op amps to address both of these requirements.

In addition, Toshiba offers high speed and high current ESD protection diodes to help manage unwelcome static shock, a concern when designing wearables and other handheld devices. This is achieved with minimal insertion loss, allowing for speeds up to 10 Gbps.

Image of Toshiba's Interface Circuit Solutions Diagram

Application Details Link:

https://toshiba.semicon-storage.com/us/semiconductor/application/smart-watch.html

Key Benefits

  • Wide portfolio of products
  • Reduces the need for board space with smaller packaging
  • Increases battery life by minimizing quiescent current (IQ)
  • Offers application notes and other material to help with design
  • Aids in new protection standards (IEC-62368-1) with eFuse

Supporting Components

MOSFETs

ImagineManufacturer Part NumberDescriereTensiune de la consumator la sursă (Vdss)Rds pornit (Max) la Id, VgsVgs (Max)Available QuantityPrețVedeți detalii
MOSFET P-CH 20V 250MA CST3CSSM3J35CTC,L3FMOSFET P-CH 20V 250MA CST3C20 V1,4Ohm la 150mA, 4,5V±10V4449 - Immediate$1.18Vedeți detalii
MOSFET P-CH 20V 1.4A CST3SSM3J56ACT,L3FMOSFET P-CH 20V 1.4A CST320 V390mOhm la 800mA, 4,5V1.6 nC @ 4.5 V22139 - Immediate$1.80Vedeți detalii
MOSFET N-CH 20V 250MA CST3CSSM3K35CTC,L3FMOSFET N-CH 20V 250MA CST3C20 V1,1Ohm la 150mA, 4,5V0.34 nC @ 4.5 V0 - Immediate$1.18Vedeți detalii
MOSFET N-CH 20V 1.4A CST3SSM3K56ACT,L3FMOSFET N-CH 20V 1.4A CST320 V235mOhm la 800mA, 4,5V1 nC @ 4.5 V0 - Immediate$1.80Vedeți detalii

Load Switch IC

ImagineManufacturer Part NumberDescriereInterfațăTensiune - SarcinăTensiune - Alimentare (Vcc/Vdd)Available QuantityPrețVedeți detalii
IC PWR SWITCH P-CHAN 1:1 4WCSPDTCK106AG,LFIC PWR SWITCH P-CHAN 1:1 4WCSPDPornit/Oprit1,1V – 5,5VNu este necesar9419 - Immediate$1.27Vedeți detalii
IC PWR SWITCH P-CHAN 1:1 4WCSPDTCK107AG,LFIC PWR SWITCH P-CHAN 1:1 4WCSPDPornit/Oprit1,1V – 5,5VNu este necesar9664 - Immediate$1.27Vedeți detalii
IC PWR SWITCH P-CHAN 1:1 4WCSPDTCK108AG,LFIC PWR SWITCH P-CHAN 1:1 4WCSPDPornit/Oprit1,1V – 5,5VNu este necesar7159 - Immediate$1.27Vedeți detalii

eFuse IC

ImagineManufacturer Part NumberDescriereTemperatură de funcționareTip montarePachet/cutieAvailable QuantityPrețVedeți detalii
IC ELECTRONIC FUSE 10WSONTCKE805NA,RFIC ELECTRONIC FUSE 10WSON-40°C – 85°C (TA)Montare pe suprafațăPlăcuță expusă 10-WFDFN2838 - Immediate$6.23Vedeți detalii
IC ELECTRONIC FUSE 10WSONTCKE805NL,RFIC ELECTRONIC FUSE 10WSON-40°C – 85°C (TA)Montare pe suprafațăPlăcuță expusă 10-WFDFN2291 - Immediate$6.23Vedeți detalii

LDO Regulators

ImagineManufacturer Part NumberDescriereCădere de tensiune (Max)Curent - În repaus (Iq)Funcții de controlAvailable QuantityPrețVedeți detalii
IC REG LIN 1.2V 300MA 4-WCSP-FTCR3UG12A,LFIC REG LIN 1.2V 300MA 4-WCSP-F0,857V la 300mA580 nAActivare4282 - Immediate$1.23Vedeți detalii
IC REG LIN 1.8V 300MA 4-WCSP-FTCR3UG18A,LFIC REG LIN 1.8V 300MA 4-WCSP-F0,457V la 300mA680 nAActivare9628 - Immediate$1.23Vedeți detalii
IC REG LIN 2.85V 300MA 4-WCSPFTCR3UG285A,LFIC REG LIN 2.85V 300MA 4-WCSPF0,327V la 300mA680 nAActivare5000 - Immediate$1.23Vedeți detalii
IC REG LINEAR 3V 300MA 4-WCSP-FTCR3UG30A,LFIC REG LINEAR 3V 300MA 4-WCSP-F0,273V la 300mA680 nAActivare6323 - Immediate$1.23Vedeți detalii
IC REG LIN 3.3V 300MA 4-WCSP-FTCR3UG33A,LFIC REG LIN 3.3V 300MA 4-WCSP-F0,273V la 300mA680 nAActivare12678 - Immediate$1.23Vedeți detalii

FET Driver ICs

ImagineManufacturer Part NumberDescriereTip poartăTensiune logică - VIL, VIHCurent - Ieșire maximă (Sursă, consumator)Available QuantityPrețVedeți detalii
IC GATE DRVR HIGH-SIDE 6WCSPETCK401G,LFIC GATE DRVR HIGH-SIDE 6WCSPE0,4V, 1,6V57385 - Immediate$2.28Vedeți detalii
IC GATE DRVR HIGH-SIDE 6WCSPETCK402G,LFIC GATE DRVR HIGH-SIDE 6WCSPE0,4V, 1,6V4591 - Immediate$2.28Vedeți detalii

ESD Diodes for Power Line Protection

ImagineManufacturer Part NumberDescriereCurent - Impuls maxim (10/1000 µs)Putere - Impuls maximProtecție linie electricăAvailable QuantityPrețVedeți detalii
TVS DIODE 5.5VWM 16VC SL2DF2B7BSL,L3FTVS DIODE 5.5VWM 16VC SL27,3A (8/20µs)115WNu4 - Immediate$0.79Vedeți detalii
TVS DIODE 12.6VWM CST2CDF2S14P2CTC,L3FTVS DIODE 12.6VWM CST2C50ANu21112 - Immediate$1.32Vedeți detalii

Schottky Barrier Diodes

ImagineManufacturer Part NumberDescriereVitezăCurent - Scurgere inversă la VrCapacitanță la Vr, FAvailable QuantityPrețVedeți detalii
DIODE SCHOTTKY 30V 200MA CST2CTS520,L3FDIODE SCHOTTKY 30V 200MA CST2Semnal redus =< 200mA (Io), Orice redusă5 µA @ 30 V16pF la 0V, 1MHz256708 - Immediate$0.79Vedeți detalii
DIODE SCHOTTKY 30V 200MA CST2CTS521,L3FDIODE SCHOTTKY 30V 200MA CST2Semnal redus =< 200mA (Io), Orice redusă30 µA @ 30 V25pF la 0V, 1MHz55595 - Immediate$0.53Vedeți detalii
DIODE SCHOTTKY 30V 100MA SL2DSF01S30SL,L3FDIODE SCHOTTKY 30V 100MA SL2Semnal redus =< 200mA (Io), Orice redusă50 µA @ 30 V9,02pF la 2V, 1MHz12441 - Immediate$1.18Vedeți detalii
DIODE SCHOTTKY 30V 100MA SL2DSR01S30SL,L3FDIODE SCHOTTKY 30V 100MA SL2Semnal redus =< 200mA (Io), Orice redusă700 nA @ 30 V8,2pF la 0V, 1MHz25141 - Immediate$0.97Vedeți detalii

High Speed ESD Diodes

ImagineManufacturer Part NumberDescriereCurent - Impuls maxim (10/1000 µs)Putere - Impuls maximProtecție linie electricăAvailable QuantityPrețVedeți detalii
TVS DIODE 3.6VWM 15VC SL2DF2B5M4ASL,L3FTVS DIODE 3.6VWM 15VC SL22A (8/20µs)30WNu24845 - Immediate$1.01Vedeți detalii
TVS DIODE 5.5VWM 15VC SL2DF2B6M4ASL,L3FTVS DIODE 5.5VWM 15VC SL22A (8/20µs)30WNu5811 - Immediate$0.97Vedeți detalii
TVS DIODE 24VWM 31.5VC SL2DF2B26M4SL,L3FTVS DIODE 24VWM 31.5VC SL2500mA (8/20µs)19WNu23838 - Immediate$0.75Vedeți detalii
TVS DIODE 3.3VWM 25VC SL2DF2B5M5SL,L3FTVS DIODE 3.3VWM 25VC SL22,5A (8/20µs)37WNu0 - Immediate$1.45Vedeți detalii
TVS DIODE 5VWM 26.5VC SL2DF2B6M5SL,L3FTVS DIODE 5VWM 26.5VC SL22,5A (8/20µs)37WNu0 - Immediate$1.23Vedeți detalii

Operational Amplifiers

ImagineManufacturer Part NumberDescriereTip ieșireViteză de saltCurent - Polarizare intrareAvailable QuantityPrețVedeți detalii
IC CMOS 1 CIRCUIT UFVTC75S67TU,LFIC CMOS 1 CIRCUIT UFV1V/µs1 pA15917 - Immediate$1.23Vedeți detalii
Published: 2020-05-27