EPC

GaN FETs in PQFN Packages

EPC GaN FETs deliver exceptional performance in compact footprints ideal for high-density power conversion

Image of EPC GaN FETs in PQFN PackagesGallium Nitride (GaN) FETs in PQFN packages from EPC deliver exceptional performance in compact footprints ideal for high-density power conversion. These devices offer ultra-low on-resistance, low gate charge, and minimal switching losses, enabling higher efficiency and faster switching speeds than traditional silicon MOSFETs.

With voltage ratings up to 200 V and pulsed current capabilities exceeding 400 A in some parts, these GaN FETs are perfect for demanding applications such as motor drives, robotics, and high-performance computing.

Features
  • Cost-effective
  • Higher performance than a MOSFET
    • Faster
    • Smaller
    • Higher current
  • Ease of use
    • Footprint compatibility maximizes design flexibility
  • Excellent thermal
    • Exposed top
    • Ultra-low thermal resistance
Applications
  • AC/DC chargers
  • High-frequency DC/DC converters
  • Motor drives
  • Solar MPPT
  • Class-D audio

GaN FETs in PQFN Packages

ImagineManufacturer Part NumberDescriereTip FETTehnologieTensiune de la consumator la sursă (Vdss)Available QuantityPrețVedeți detalii
TRANS GAN 100V DIE,1.5 MOHM, 5PIEPC2367TRANS GAN 100V DIE,1.5 MOHM, 5PICanal-NGaNFET (nitrură de galiu)100 V0 - Immediate$30.04Vedeți detalii
TRANS GAN 100V DIE .0018OHMEPC2302TRANS GAN 100V DIE .0018OHMCanal-NGaNFET (nitrură de galiu)100 V151412 - Immediate$34.97Vedeți detalii
TRANS GAN 200V .005OHM 7QFNEPC2304TRANS GAN 200V .005OHM 7QFNCanal-NGaNFET (nitrură de galiu)200 V0 - Immediate$36.84Vedeți detalii
TRANS GAN 150V .0022OHM 3X5 7QFNEPC2305TRANS GAN 150V .0022OHM 3X5 7QFNCanal-NGaNFET (nitrură de galiu)150 V22750 - Immediate$35.93Vedeți detalii
TRANS GAN 100V .0038OHM 3X5PQFNEPC2306TRANS GAN 100V .0038OHM 3X5PQFNCanal-NGaNFET (nitrură de galiu)100 V25031 - Immediate$22.19Vedeți detalii
TRANS GAN 200V .010OHM 7QFNEPC2307TRANS GAN 200V .010OHM 7QFNCanal-NGaNFET (nitrură de galiu)200 V7870 - Immediate$22.19Vedeți detalii
TRANS GAN 150V .006OHM 7QFNEPC2308TRANS GAN 150V .006OHM 7QFNCanal-NGaNFET (nitrură de galiu)150 V8844 - Immediate$22.76Vedeți detalii

Evaluation Boards

ImagineManufacturer Part NumberDescriereAvailable QuantityPrețVedeți detalii
EVAL BOARD FOR EPC2304EPC90140EVAL BOARD FOR EPC230463 - Immediate$861.84Vedeți detalii
EVAL BOARD FOR EPC2305EPC90143EVAL BOARD FOR EPC230524 - Immediate$861.84Vedeți detalii
EVAL BOARD FOR EPC2306EPC90145EVAL BOARD FOR EPC23064 - Immediate$861.84Vedeți detalii
EVAL BOARD FOR EPC2307EPC90150EVAL BOARD FOR EPC230741 - Immediate$861.84Vedeți detalii
EVAL BOARD FOR EPC2308EPC90148EVAL BOARD FOR EPC230832 - Immediate$861.84Vedeți detalii
EVAL BOARD FOR EPC2302EPC90133EVAL BOARD FOR EPC230247 - Immediate$861.84Vedeți detalii
BD DEMO 1/2 BRIDGE 100V EPC2367EPC90164BD DEMO 1/2 BRIDGE 100V EPC236714 - Immediate$861.84Vedeți detalii
Published: 2025-04-10

Related Videos

EPC 2024 electronica interview: GaN and the future of untethered robots
EPC 2024 electronica interview: GaN and the future of untethered robots

Publish Date: 2025-01-29

GaN Experts unbox a Gallium Nitride (GaN) Powered Motor Drive Evaluation Kit
GaN Experts unbox a Gallium Nitride (GaN) Powered Motor Drive Evaluation Kit

Publish Date: 2023-09-19

Gallium Nitride Reliability in Real-World DC-DC Applications
Gallium Nitride Reliability in Real-World DC-DC Applications

Publish Date: 2023-08-31

Related Product Highlight

EPC91107KIT + EPC91110KIT 5 kW GaN AC to 48 V/50 V Reference Solution The EPC EPC91107KIT + EPC91110KIT 5 kW GaN AC to 48 V/50 V reference solution is powered by GaN; EPC2304 (200 V, 5 mΩ) in PFC and EPC2305 (150 V, 3 mΩ) in LLC.
EPC9196 3-Phase Motor Drive Inverter Evaluation Board EPC EPC9196 3-phase motor drive inverter eval boards are compatible with third-party controller boards and features onboard current, voltage, and temp sensing.
EPC91200 Motor Drive Inverter Board EPC EPC91200 is a 3-phase BLDC motor drive inverter board featuring the EPC2305 eGaN 150 V maximum device voltage intended for 96 V batteries.

Related Articles and Blogs

Cum se utilizează dispozitivele de putere GaN pentru invertoare de motor superioare din gama medie Dispozitivele de comutare a puterii bazate pe tehnologia de procesare GaN oferă o eficiență mai mare, dimensiuni mai mici și performanțe termice îmbunătățite pentru invertoarele de motor de gamă medie.
Semiconductorii cu bandă interzisă largă asigură eficiența în centrele de date Pentru că centrele de date au cerințe energetice uriașe, sunt necesare soluții de alimentare care pot reduce pierderile de energie, pot crește eficiența și pot îmbunătăți controlul termic.
Semiconductorii cu bandă interzisă largă remodelează lumea transporturilor Întregul sector al transporturilor trece printr-o transformare radicală, cu soluții pentru mașini electrice și hibride și pentru un transport în comun mai curat.