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EPC2100 Transistors and EPC9036 Dev Board
EPC's monolithic eGaN® half-bridge transistors
Enhancement-mode monolithic half-bridge GaN transistors from EPC further widen the efficiency gap between eGaN® technology and traditional silicon. Monolithic half-bridge devices save space, improve efficiency, and lower system costs.
Increase Efficiency - Monolithic half-bridge devices eliminate interconnect inductances for higher efficiency – especially at higher frequencies.
Save Board Space - Monolithic devices save 60% of power stage real-estate on the PCB.
Simplifying GaN - Monolithic devices increase manufacturing efficiencies while reducing assembly costs.
EPC2100 Transistor
| Imagine | Manufacturer Part Number | Descriere | Caracteristică FET | Tensiune de la consumator la sursă (Vdss) | Available Quantity | Preț | ||
|---|---|---|---|---|---|---|---|---|
 |  | EPC2100 | MOSFET 2N-CH 30V 10A DIE | – | 30V | 220 - Immediate | $46.91 | Vedeți detalii |
EPC9036 Dev Board
| Imagine | Manufacturer Part Number | Descriere | Funcție | Încorporat | IC/piesă utilizată | Available Quantity | Preț | Vedeți detalii | |
|---|---|---|---|---|---|---|---|---|---|
|  | EPC9036 | EVAL BOARD FOR EPC2100 | Driver semi-punte H (FET extern) | Nu | EPC2100 | 0 - Immediate | See Page for Pricing | Vedeți detalii |
Updated: 2019-04-30
Published: 2014-09-23
România