Name: SISS60DN-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SISS60DN-T1-GE3TR-ND
Price: 12.4751 RON
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SISS60DN-T1-GE3
DigiKey Part Number	742-SISS60DN-T1-GE3TR-ND - Tape & Reel (TR) 742-SISS60DN-T1-GE3CT-ND - Cut Tape (CT) 742-SISS60DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISS60DN-T1-GE3
Description	MOSFET N-CH 30V 50.1/181.8A PPAK
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 50.1A (Ta), 181.8A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	50.1A (Ta), 181.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.31mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	85.5 nC @ 10 V
Vgs (Max)	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	3960 pF @ 15 V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	5.1W (Ta), 65.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S
Base Product Number	SISS60