Name: SIHG33N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG33N60E-GE3-ND
Price: 38.1392 RON
Availability: OutOfStock

SIHG33N60E-GE3 is out of stock and can be placed on backorder.

Available Substitutes:

Similar

Infineon Technologies

In Stock: 524

Unit Price: 37,67000 lei

Similar

Infineon Technologies

In Stock: 0

Unit Price: 44,04000 lei

Similar

STMicroelectronics

In Stock: 369

Unit Price: 48,57000 lei

Similar

STMicroelectronics

In Stock: 487

Unit Price: 50,05000 lei

Similar

STMicroelectronics

In Stock: 0

Unit Price: 22,24610 lei

Similar

STMicroelectronics

In Stock: 600

Unit Price: 24,29000 lei

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHG33N60E-GE3
DigiKey Part Number	SIHG33N60E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHG33N60E-GE3
Description	MOSFET N-CH 600V 33A TO247AC
Manufacturer Standard Lead Time	25 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 33A (Tc) 278W (Tc) Through Hole TO-247AC
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3508 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3
Base Product Number	SIHG33