SI3424BDV-T1-GE3 Vishay Siliconix | Single FETs, MOSFETs

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SI3424BDV-T1-GE3
DigiKey Part Number	SI3424BDV-T1-GE3TR-ND - Tape & Reel (TR) SI3424BDV-T1-GE3CT-ND - Cut Tape (CT) SI3424BDV-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI3424BDV-T1-GE3
Description	MOSFET N-CH 30V 8A 6TSOP
Customer Reference
Detailed Description	N-Channel 30 V 8A (Tc) 2.1W (Ta), 2.98W (Tc) Surface Mount 6-TSOP
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 19.6 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 735 pF @ 15 V
Part Status Obsolete	Power Dissipation (Max) 2.1W (Ta), 2.98W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 30 V	Supplier Device Package 6-TSOP
Current - Continuous Drain (Id) @ 25°C 8A (Tc)	Package / Case SOT-23-6 Thin, TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SI3424
Rds On (Max) @ Id, Vgs 28mOhm @ 7A, 10V

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Substitutes (8)

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Cut Tape (CT)

Unit Price without VAT:	3,81000 lei
Unit Price with VAT:	4,61010 lei

SI3424BDV-T1-GE3