N-Channel 650 V 30A (Tc) 111W (Tc) Through Hole TO-247
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N-Channel 650 V 30A (Tc) 111W (Tc) Through Hole TO-247
Toshiba 650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs | Datasheet Preview

TW083N65C,S1F

DigiKey Part Number
264-TW083N65CS1F-ND
Manufacturer
Manufacturer Product Number
TW083N65C,S1F
Description
G3 650V SIC-MOSFET TO-247 83MOH
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 30A (Tc) 111W (Tc) Through Hole TO-247
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
113mOhm @ 15A, 18V
Vgs(th) (Max) @ Id
5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
873 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
111W (Tc)
Operating Temperature
175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
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QuantityUnit PriceExt Price
177,86000 lei77,86 lei
3048,17200 lei1.445,16 lei
12041,67308 lei5.000,77 lei
51039,11794 lei19.950,15 lei
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:77,86000 lei
Unit Price with VAT:94,21060 lei