Name: TK14E65W5,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK14E65W5S1X-ND
Price: 24.0548 RON
Availability: OutOfStock

TK14E65W5,S1X is out of stock and can be placed on backorder.

Available Substitutes:

Parametric Equivalent

Toshiba Semiconductor and Storage

In Stock: 30

Unit Price: 25,94000 lei

Similar

Alpha & Omega Semiconductor Inc.

In Stock: 0

Unit Price: 0,00000 lei

Similar

onsemi

In Stock: 0

Unit Price: 0,00000 lei

Similar

Infineon Technologies

In Stock: 487

Unit Price: 8,85000 lei

Similar

IXYS

In Stock: 0

Unit Price: 8,68380 lei

Similar

STMicroelectronics

In Stock: 0

Unit Price: 4,19371 lei

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK14E65W5,S1X
DigiKey Part Number	TK14E65W5S1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK14E65W5,S1X
Description	MOSFET N-CH 650V 13.7A TO220
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 13.7A (Ta) 130W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK14E65W5,S1X Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	300mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id	4.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	130W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	TK14E65