N-Channel 650 V 18.9A (Tc) 65.8W (Tc) Through Hole TO-220AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TP65H100G4PS

DigiKey Part Number
1707-TP65H100G4PS-ND
Manufacturer
Renesas Electronics Corporation
Manufacturer Product Number
TP65H100G4PS
Description
Hi Volt FETs
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 18.9A (Tc) 65.8W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Renesas Electronics Corporation
Series
SuperGaN®
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
18.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4.1V @ 1.8mA
Gate Charge (Qg) (Max) @ Vgs
14.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
818 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
65.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
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In-Stock: 1.000
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Quantity
All prices are in RON
Tube
QuantityUnit PriceExt Price
129,05000 lei29,05 lei
5015,39820 lei769,91 lei
10014,07910 lei1.407,91 lei
50011,76862 lei5.884,31 lei
1.00011,02706 lei11.027,06 lei
2.00010,69624 lei21.392,48 lei
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:29,05000 lei
Unit Price with VAT:35,15050 lei
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