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N-Channel 1200 V 28A (Tc) 75.3W (Tc) Through Hole ISO247-3L
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N-Channel 1200 V 28A (Tc) 75.3W (Tc) Through Hole ISO247-3L
TO-247-3

IXSJ25N120R1

DigiKey Part Number
238-IXSJ25N120R1-ND
Manufacturer
IXYS
Manufacturer Product Number
IXSJ25N120R1
Description
1200V 62M (25A @ 25C) SIC MOSFET
Manufacturer Standard Lead Time
35 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 28A (Tc) 75.3W (Tc) Through Hole ISO247-3L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
81mOhm @ 12A, 18V
Vgs(th) (Max) @ Id
4.8V @ 5.3mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 18 V
Vgs (Max)
+21V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1435 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
75.3W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
ISO247-3L
Package / Case
TO-247-3
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In-Stock: 288
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Quantity
All prices are in RON
Tube
QuantityUnit PriceExt Price
159,59000 lei59,59 lei
3036,19833 lei1.085,95 lei
12031,07100 lei3.728,52 lei
51030,11406 lei15.358,17 lei
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:59,59000 lei
Unit Price with VAT:72,10390 lei