Name: IPP022N12NM6AKSA1
Brand: Infineon Technologies
SKU: 448-IPP022N12NM6AKSA1-ND
Price: 36.7235 RON
Availability: InStock

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IPP022N12NM6AKSA1
DigiKey Part Number	448-IPP022N12NM6AKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPP022N12NM6AKSA1
Description	TRENCH >=100V
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 120 V 29A (Ta), 203A (Tc) 3.8W (Ta), 395W (Tc) Through Hole PG-TO220-3-1
Datasheet	Datasheet
EDA/CAD Models	IPP022N12NM6AKSA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™ 6
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	29A (Ta), 203A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	2.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.6V @ 275µA
Gate Charge (Qg) (Max) @ Vgs	141 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 395W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3

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Tube