IPB049NE7N3GATMA1 Infineon Technologies | Single FETs, MOSFETs

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IPB049NE7N3GATMA1
DigiKey Part Number	IPB049NE7N3GATMA1TR-ND - Tape & Reel (TR) IPB049NE7N3GATMA1CT-ND - Cut Tape (CT)
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPB049NE7N3GATMA1
Description	MOSFET N-CH 75V 80A D2PAK
Customer Reference
Detailed Description	N-Channel 75 V 80A (Tc) 150W (Tc) Surface Mount PG-TO263-3
Datasheet	Datasheet
EDA/CAD Models	IPB049NE7N3GATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.8V @ 91µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Series OptiMOS™	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT)	Input Capacitance (Ciss) (Max) @ Vds 4750 pF @ 37.5 V
Part Status Obsolete	Power Dissipation (Max) 150W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 75 V	Supplier Device Package PG-TO263-3
Current - Continuous Drain (Id) @ 25°C 80A (Tc)	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPB049
Rds On (Max) @ Id, Vgs 4.9mOhm @ 80A, 10V

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