Name: IMZC120R012M2HXKSA1
Brand: Infineon Technologies
SKU: 448-IMZC120R012M2HXKSA1-ND
Price: 163.1806 RON
Availability: OutOfStock

N-Channel 1200 V 129A (Tc) 480W (Tc) Through Hole PG-TO247-4-17

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IMZC120R012M2HXKSA1
DigiKey Part Number	448-IMZC120R012M2HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMZC120R012M2HXKSA1
Description	SICFET N-CH 1200V 129A TO247
Manufacturer Standard Lead Time	69 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 129A (Tc) 480W (Tc) Through Hole PG-TO247-4-17
Datasheet	Datasheet
EDA/CAD Models	IMZC120R012M2HXKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 12mOhm @ 57A, 18V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5.1V @ 17.8mA
Series CoolSiC™ G2	Gate Charge (Qg) (Max) @ Vgs 124 nC @ 18 V
Packaging Tube	Vgs (Max) +23V, -7V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 4050 pF @ 800 V
FET Type N-Channel	Power Dissipation (Max) 480W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 129A (Tc)	Supplier Device Package PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V	Package / Case TO-247-4