Name: IMZA75R008M1HXKSA1
Brand: Infineon Technologies
SKU: 448-IMZA75R008M1HXKSA1-ND
Price: 229.4281 RON
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMZA75R008M1HXKSA1
DigiKey Part Number	448-IMZA75R008M1HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMZA75R008M1HXKSA1
Description	SILICON CARBIDE MOSFET
Customer Reference
Detailed Description	N-Channel 750 V 163A (Tc) 517W (Tc) Through Hole PG-TO247-4-U02
Datasheet	Datasheet
EDA/CAD Models	IMZA75R008M1HXKSA1 Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 7.2mOhm @ 90.3A, 20V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5.6V @ 32.4mA
Series CoolSiC™	Gate Charge (Qg) (Max) @ Vgs 178 nC @ 500 V
Packaging Tube	Vgs (Max) +23V, -5V
Part Status Not For New Designs	Input Capacitance (Ciss) (Max) @ Vds 6137 pF @ 500 V
FET Type N-Channel	Power Dissipation (Max) 517W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 750 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 163A (Tc)	Supplier Device Package PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V	Package / Case TO-247-4