Name: IMBG65R010M2H
Brand: Infineon Technologies
SKU: 448-IMBG65R010M2HDKR-ND
Price: 117.5515 RON
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMBG65R010M2H
DigiKey Part Number	448-IMBG65R010M2HCT-ND - Cut Tape (CT) 448-IMBG65R010M2HDKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMBG65R010M2H
Description	IMBG65R010M2H
Customer Reference
Detailed Description	N-Channel 650 V 158A (Tc) 535W (Tc) Surface Mount PG-TO263-7-12
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	158A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 20V
Rds On (Max) @ Id, Vgs	9.1mOhm @ 92.1A, 20V
Vgs(th) (Max) @ Id	5.6V @ 18.7mA
Gate Charge (Qg) (Max) @ Vgs	112 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	4001 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	535W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-12
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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In-Stock: 103

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Cut Tape (CT) & Digi-Reel®