Name: IMBG120R012M2HXTMA1
Brand: Infineon Technologies
SKU: 448-IMBG120R012M2HXTMA1TR-ND
Price: 119.7658 RON
Availability: InStock

N-Channel 1200 V 144A (Tc) 600W (Tc) Surface Mount PG-TO263-7-12

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMBG120R012M2HXTMA1
DigiKey Part Number	448-IMBG120R012M2HXTMA1TR-ND - Tape & Reel (TR) 448-IMBG120R012M2HXTMA1CT-ND - Cut Tape (CT) 448-IMBG120R012M2HXTMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMBG120R012M2HXTMA1
Description	SICFET N-CH 1200V 144A TO263
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 144A (Tc) 600W (Tc) Surface Mount PG-TO263-7-12
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™ G2
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	144A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	12.2mOhm @ 56.7A, 18V
Vgs(th) (Max) @ Id	5.1V @ 17.8mA
Gate Charge (Qg) (Max) @ Vgs	124 nC @ 18 V
Vgs (Max)	+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds	4050 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	600W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-12
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number	IMBG120R012