Name: IGT65R055D2ATMA1
Brand: Infineon Technologies
SKU: 448-IGT65R055D2ATMA1TR-ND
Price: 43.8504 RON
Availability: InStock

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IGT65R055D2ATMA1
DigiKey Part Number	448-IGT65R055D2ATMA1TR-ND - Tape & Reel (TR) 448-IGT65R055D2ATMA1CT-ND - Cut Tape (CT) 448-IGT65R055D2ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IGT65R055D2ATMA1
Description	GANFET N-CH 650V 31A 8PSFN
Manufacturer Standard Lead Time	35 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 31A (Tc) 106W (Tc) Surface Mount PG-HSOF-8-3
Datasheet	Datasheet
EDA/CAD Models	IGT65R055D2ATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 1.6V @ 2.6mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 3 V
Series CoolGaN™ G5	Vgs (Max) -10V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 400 V
Part Status Active	Power Dissipation (Max) 106W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology GaNFET (Gallium Nitride)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 650 V	Supplier Device Package PG-HSOF-8-3
Current - Continuous Drain (Id) @ 25°C 31A (Tc)	Package / Case 8-PowerSFN
Rds On (Max) @ Id, Vgs 66mOhm @ 7.9A