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IRFB38N20DPBF N-Channel 200V 43A (Tc) 3.8W (Ta), 300W (Tc) Through Hole TO-220AB
Price & Procurement
986 In Stock
Can ship immediately
 

Quantity
All prices are in RON.
Price Break Unit Price Extended Price
1 8,16000 8,16 lei
10 7,32100 73,21 lei
25 6,90840 172,71 lei
100 5,38850 538,85 lei
500 4,55944 2.279,72 lei
1.000 3,86860 3.868,60 lei
2.500 3,81334 9.533,35 lei
5.000 3,53700 17.685,02 lei
9.000 3,39884 30.589,56 lei

Submit a request for quotation on quantities greater than those displayed.

IRFB38N20DPBF

Datasheet
Digi-Key Part Number IRFB38N20DPBF-ND
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Manufacturer

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Manufacturer Part Number IRFB38N20DPBF
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Description MOSFET N-CH 200V 43A TO-220AB
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Detailed Description

N-Channel 200V 43A (Tc) 3.8W (Ta), 300W (Tc) Through Hole TO-220AB

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Documents & Media
Datasheets IRF(B,S,SL)38N20DPbF
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Simulation Models IRFB38N20DPBF Saber Model
PCN Assembly/Origin TO-220 FET Alternate Site 22/Aug/2013
PCN Packaging Package Drawing Update 19/Aug/2015
Featured Product Data Processing Systems
Other Related Documents IR Part Numbering System
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 54mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRFB38N20DPBF
SP001556010