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IRFB38N20DPBF N-Channel 200V 43A (Tc) 3.8W (Ta), 300W (Tc) Through Hole TO-220AB
Price & Procurement
1.123 In Stock
Can ship immediately
 

Quantity
All prices are in RON.
Price Break Unit Price Extended Price
1 8,71000 8,71 lei
10 7,81600 78,16 lei
100 5,75120 575,12 lei
500 4,86650 2.433,25 lei
1.000 4,12913 4.129,13 lei

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IRFB38N20DPBF

Datasheet
Digi-Key Part Number IRFB38N20DPBF-ND
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Manufacturer

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Manufacturer Part Number IRFB38N20DPBF
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Description MOSFET N-CH 200V 43A TO-220AB
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Manufacturer Standard Lead Time 10 Weeks
Detailed Description

N-Channel 200V 43A (Tc) 3.8W (Ta), 300W (Tc) Through Hole TO-220AB

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Documents & Media
Datasheets IRF(B,S,SL)38N20DPbF
Other Related Documents IR Part Numbering System
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product Data Processing Systems
PCN Assembly/Origin TO-220 FET Alternate Site 22/Aug/2013
PCN Packaging Package Drawing Update 19/Aug/2015
Simulation Models IRFB38N20DPBF Saber Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 54mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package 50
Other Names *IRFB38N20DPBF
SP001556010