Name: SCT040W120G3-4
Brand: STMicroelectronics
SKU: 497-SCT040W120G3-4-ND
Price: 83.0907 RON
Availability: OutOfStock

SCT040W120G3-4 is out of stock and can be placed on backorder.

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SCT040W120G3-4
DigiKey Part Number	497-SCT040W120G3-4-ND
Manufacturer	STMicroelectronics
Manufacturer Product Number	SCT040W120G3-4
Description	SILICON CARBIDE POWER MOSFET 120
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 40A (Tc) 312W (Tc) Through Hole TO-247-4
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	*
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	54mOhm @ 16A, 18V
Vgs(th) (Max) @ Id	4.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 18 V
Vgs (Max)	+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds	1329 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	312W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4
Base Product Number	SCT040